Dynamic random access memory capable of fast erasing of storage

Details Dynamic random access memory capable of fast erasing of storage Dynamic random access memory capable of fast erasing of storage

1987-05-20

1989-10-10

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Erase

365203, G11C 700

Patent

active

048736724

ABSTRACT:
This invention relates to a semiconductor memory having a high speed operation and a high integration density. When a high integration semiconductor memory is applied to a large scale computer system, storage data must be erased at a high speed for data security. The present invention erases the storage data by a method which is different from the write method of conventional prior art. In the invention, the erasing operation is made by continuously selecting word lines while sense amplifiers are kept in this on-state. The present invention includes a control circuit for attaining such an operation, and can be used for a semiconductor memory implemented in a computer system accessed by a plurality of users.

REFERENCES:
patent: 4758990 (1988-07-01), Uchida
IEEE Journal of Solid-State Circuits--vol. SC-19, No. 5, Oct. 1984, pp. 619-623.

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