Dynamic pre-charge level control in semiconductor devices

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S156000, C365S190000

Reexamination Certificate

active

11041345

ABSTRACT:
Dynamic control of a pre-charge level particularly for memory cells is described. In one example, a circuit block has pre-charge node and a power supply is coupled to the pre-charge node to provide either a first power level or a second power level when the circuit block is not active. The first power level may be a pre-charge mode power level and the second power level may be a sleep mode power level.

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