Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23020, C257SE23037, C257SE23038, C257S459000, C257S777000, C257S778000, C257S779000, C257S780000, C257S737000, C257S738000, C438S108000, C438S455000, C438S612000, C438S613000, C438S614000, C438S615000, C438S616000, C438S617000
Reexamination Certificate
active
08008786
ABSTRACT:
A semiconductor device is provided which comprises a substrate (501) having a plurality of bond pads (503) disposed thereon. Each bond pad has a major axis and a minor axis in a direction parallel to the substrate, and the ratio of the major axis to the minor axis increases with the distance of a bond pad from the center of the substrate.
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Pham Tim V.
Uehling Trent S.
Dehne Aaron
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Nguyen Ha Tran T
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