Dynamic pad size to reduce solder fatigue

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds

Reexamination Certificate

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Details

C257SE23020, C257SE23037, C257SE23038, C257S459000, C257S777000, C257S778000, C257S779000, C257S780000, C257S737000, C257S738000, C438S108000, C438S455000, C438S612000, C438S613000, C438S614000, C438S615000, C438S616000, C438S617000

Reexamination Certificate

active

08008786

ABSTRACT:
A semiconductor device is provided which comprises a substrate (501) having a plurality of bond pads (503) disposed thereon. Each bond pad has a major axis and a minor axis in a direction parallel to the substrate, and the ratio of the major axis to the minor axis increases with the distance of a bond pad from the center of the substrate.

REFERENCES:
patent: 5404047 (1995-04-01), Rostoker et al.
patent: 5880987 (1999-03-01), Merritt
patent: 6268568 (2001-07-01), Kim
patent: 6625048 (2003-09-01), Adedifard
patent: 6678948 (2004-01-01), Benzler et al.
patent: 2005/0012213 (2005-01-01), Imaoka
patent: 2005/0269710 (2005-12-01), Lee et al.
patent: 2006/0121718 (2006-06-01), Machida et al.

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