Static information storage and retrieval – Read/write circuit – Precharge
Patent
1985-05-28
1986-04-08
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Precharge
365227, 307246, G11C 1300
Patent
active
045817197
ABSTRACT:
In a dynamic MOS memory, e.g. a RAM, the charge on the capacitor of a reference cell is restored following a read or refresh operation by coupling a reference voltage generator to the RAM bit line. The generator produces the reference voltage at the output of a buffer whose input is coupled to two capacitors after these have been charged to different voltages and their charges shared. The arrangement allows for transistor thresholds without requiring bootstrapping, is insensitive to manufacturing process variations in that all of the capacitors can be similar, provides for enhanced operation speed, and provides for qualitative signal margin analysis.
REFERENCES:
patent: 4504929 (1985-03-01), Takemae et al.
Fears Terrell W.
Haley R. John
Northern Telecom Limited
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