Static information storage and retrieval – Read/write circuit – Precharge
Patent
1991-04-05
1993-08-03
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Precharge
365149, G11C 700
Patent
active
052335607
ABSTRACT:
A method and apparatus for precharging DRAM bit lines and data buses from the same voltage source, eliminating a separate bit line precharge source and the bit line precharge conduction paths. The precharge source for the data buses is coupled to the data buses and at the same time access transistors normally used to couple the bit line logic voltage to the data buses are enabled, in order to cause coupling of the precharge voltage source through the data buses and the access transistors to the bit lines during a precharge interval. This both precharges and equalizes the voltage on both complementary data buses and both complementary bit lines.
REFERENCES:
patent: 4571708 (1986-02-01), Davis
patent: 4606010 (1986-08-01), Satio
patent: 4866674 (1989-09-01), Tran
patent: 4962326 (1990-10-01), Parkinson
patent: 5091885 (1992-02-01), Ohsawa
Foss Richard C.
Yoneyama Akira
LaRoche Eugene R.
Zarabian A.
LandOfFree
Dynamic memory bit line precharge scheme does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic memory bit line precharge scheme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic memory bit line precharge scheme will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2277106