Dynamic memory bit line precharge scheme

Static information storage and retrieval – Read/write circuit – Precharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365149, G11C 700

Patent

active

052335607

ABSTRACT:
A method and apparatus for precharging DRAM bit lines and data buses from the same voltage source, eliminating a separate bit line precharge source and the bit line precharge conduction paths. The precharge source for the data buses is coupled to the data buses and at the same time access transistors normally used to couple the bit line logic voltage to the data buses are enabled, in order to cause coupling of the precharge voltage source through the data buses and the access transistors to the bit lines during a precharge interval. This both precharges and equalizes the voltage on both complementary data buses and both complementary bit lines.

REFERENCES:
patent: 4571708 (1986-02-01), Davis
patent: 4606010 (1986-08-01), Satio
patent: 4866674 (1989-09-01), Tran
patent: 4962326 (1990-10-01), Parkinson
patent: 5091885 (1992-02-01), Ohsawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic memory bit line precharge scheme does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic memory bit line precharge scheme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic memory bit line precharge scheme will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2277106

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.