Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1996-05-24
1997-12-16
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365205, G11C 700
Patent
active
056993048
ABSTRACT:
A level converter for use in a semiconductor memory device includes a level converting unit, a latch circuit and a blocking circuit. The level converting unit receives sensed first and second sensing voltages and a control clock and which provides level-converted first and second output voltages in correspondence with the first and second sensing voltage at first and second output nodes in response to the control clock. The latch circuit boosts a difference between the first and second output voltages provided at the first and second output nodes to be substantially equal to the level of a supply voltage in response to the application of the supply voltage. The blocking circuit controls the application of the supply voltage to the level converting unit and the latch circuit according to the control clock, in order to reduce current consumption due to the application of the supply voltage and to achieve a high operating speed.
REFERENCES:
patent: 4716320 (1987-12-01), McAdams
patent: 5041746 (1991-08-01), Webster et al.
patent: 5577000 (1996-11-01), Asami
Jung Chul-Min
Yang Seung-Kweon
Nelms David C.
Samsung Electronics Co,. Ltd.
Tran Michael T.
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