Dynamic access memory using silicon-on-insulator

Details Dynamic access memory using silicon-on-insulator Dynamic access memory using silicon-on-insulator

1997-04-15

1999-08-17

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257306, 257350, 257347, H01L 27108, H01L 2712

Patent

active

059397454

ABSTRACT:
The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating layer by isolation of electrical elements in order to divide an active region and a passive region; forming and patterning a first conductive layer through a contact to which the active region and a capacitor are connected on the insulating layer to form a storage node; forming a dielectric layer of the capacitor on the storage node; forming and patterning a polysilicon layer on the dielectric layer to form a storage node; forming a second insulating layer on the plate node and planarizing the insulating layer by thermal treatment; forming a third conductive layer to a predetermined thickness on the planarized insulating layer; polishing and planarizing the third conductive layer by chemical-mechanical polishing technique, using the second insulating layer as an etchstopper and bonding a second silicon substrate on the planarized third conductive layer; planarizing a backside of the first substrate by a chemical-mechanical polishing technique and exposing the active region; and forming a switching element on the forming a bit line.

REFERENCES:
patent: 4907047 (1990-03-01), Kato et al.
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patent: 5119155 (1992-06-01), Hieda et al.
patent: 5414285 (1995-05-01), Nishihara
patent: 5414655 (1995-05-01), Ozaki et al.
Toshiyuki Nishihara et al. "A Buried Capacitor DRAM Cell With Bonded Soi for 256M and 1Gbit DRAMs" ULSI Research & Development Group, Sony Corporation 4-14-1 Asahi-cho, Aisugi-shi, Kanagawa 243, Japan. pp. 32.2.1-32.2.4, IEDM 1992.

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