Dummy vias for damascene process

Details Dummy vias for damascene process Dummy vias for damascene process

2011-06-14

2011-06-14

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With semiconductor element forming part

C257S758000, C257SE21058, C257SE21244, C257SE21304, C257SE21523, C257SE21583, C257SE21586, C257SE23142, C257SE23167

Reexamination Certificate

active

07960821

ABSTRACT:
An integrated circuit device and method of making the integrated circuit device are disclosed. An exemplary apparatus includes: a semiconductor layer; and a dielectric layer on the semiconductor layer, the dielectric layer having conductive vias and dummy vias formed therein, wherein the conductive vias and dummy vias extend varying distances into the dielectric layer, the conductive vias extending through the dielectric layer to the semiconductor layer, and the dummy vias extending through the dielectric layer to a distance above the semiconductor layer.

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