Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Layout generation
Reexamination Certificate
2011-06-07
2011-06-07
Kik, Phallaka (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Layout generation
C716S119000, C716S126000, C716S132000
Reexamination Certificate
active
07958465
ABSTRACT:
A method of forming an integrated circuit structure on a chip includes extracting an active pattern including a diffusion region; enlarging the active pattern to form a dummy-forbidden region having a first edge and a second edge perpendicular to each other; and adding stress-blocking dummy diffusion regions throughout the chip, which includes adding a first stress-blocking dummy diffusion region adjacent and substantially parallel to the first edge of the dummy-forbidden region; and adding a second stress-blocking dummy diffusion region adjacent and substantially parallel to the second edge of the dummy-forbidden region. The method further includes, after the step of adding the stress-blocking dummy diffusion regions throughout the chip, adding general dummy diffusion regions into remaining spacings of the chip.
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Kuo Chien-Chih
Li Jian-Yi
Lu Lee-Chung
Yang Sheng-Jier
Kik Phallaka
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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