Dummy pattern design for reducing device performance drift

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Layout generation

Reexamination Certificate

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C716S119000, C716S126000, C716S132000

Reexamination Certificate

active

07958465

ABSTRACT:
A method of forming an integrated circuit structure on a chip includes extracting an active pattern including a diffusion region; enlarging the active pattern to form a dummy-forbidden region having a first edge and a second edge perpendicular to each other; and adding stress-blocking dummy diffusion regions throughout the chip, which includes adding a first stress-blocking dummy diffusion region adjacent and substantially parallel to the first edge of the dummy-forbidden region; and adding a second stress-blocking dummy diffusion region adjacent and substantially parallel to the second edge of the dummy-forbidden region. The method further includes, after the step of adding the stress-blocking dummy diffusion regions throughout the chip, adding general dummy diffusion regions into remaining spacings of the chip.

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