Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-21
2005-06-21
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S269000, C438S253000
Reexamination Certificate
active
06908815
ABSTRACT:
A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.
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Li Yu-jun
Tonti William R.
Ye Qiuyi
Heslin Rothenberg Farley & & Mesiti P.C.
Lebentritt Michael S.
Lindsay Jr. Walter L.
Radigan, Esq. Kevin P.
Sabo, Esq. William D.
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