Dual work function semiconductor structure with borderless...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S269000, C438S253000

Reexamination Certificate

active

06908815

ABSTRACT:
A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.

REFERENCES:
patent: 4246044 (1981-01-01), Yanase
patent: 5258645 (1993-11-01), Sato
patent: 5444653 (1995-08-01), Nagasawa et al.
patent: 5466636 (1995-11-01), Cronin et al.
patent: 5538922 (1996-07-01), Cooper et al.
patent: 5569948 (1996-10-01), Kim
patent: 5591301 (1997-01-01), Grewal
patent: 5610101 (1997-03-01), Koyama
patent: 5654236 (1997-08-01), Kasai
patent: 5723381 (1998-03-01), Grewal et al.
patent: 5731242 (1998-03-01), Parat et al.
patent: 5759867 (1998-06-01), Armacost et al.
patent: 5808365 (1998-09-01), Mori
patent: 5874756 (1999-02-01), Ema et al.
patent: 5882968 (1999-03-01), Jun
patent: 5913114 (1999-06-01), Lee et al.
patent: 5929524 (1999-07-01), Drynan et al.
patent: 5932906 (1999-08-01), Shimizu
patent: 5939746 (1999-08-01), Koyama et al.
patent: 5960318 (1999-09-01), Peschke et al.
patent: 5973348 (1999-10-01), Ishibashi
patent: 5977583 (1999-11-01), Hosotani et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6022776 (2000-02-01), Lien et al.
patent: 6046103 (2000-04-01), Thei et al.
patent: 6165901 (2000-12-01), Hsu
patent: 6211021 (2001-04-01), Wang et al.
patent: 6228777 (2001-05-01), Arafa et al.
patent: 6235593 (2001-05-01), Huang
patent: 6265271 (2001-07-01), Thei et al.
patent: 6271087 (2001-08-01), Kinoshita et al.
patent: 6326270 (2001-12-01), Lee et al.
patent: 6406987 (2002-06-01), Huang
patent: 6633069 (2003-10-01), Nii et al.
patent: 6686668 (2004-02-01), Nesbit et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dual work function semiconductor structure with borderless... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual work function semiconductor structure with borderless..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual work function semiconductor structure with borderless... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3473479

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.