Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S648000, C438S649000
Reexamination Certificate
active
07101747
ABSTRACT:
Complementary transistors and methods of forming the complementary transistors on a semiconductor assembly are described. The transistors can be formed from a metal silicon compound deficient of silicon bonding atoms on a dielectric material overlying a semiconductor substrate conductively doped for PMOS and NMOS regions. The metal silicon compound overlying the NMOS region is converted to a metal silicon nitride and the metal silicon compound overlying the PMOS region is converted to a metal silicide. NMOS transistor gate electrodes comprising metal silicon nitride and PMOS transistor gate electrodes comprising metal silicide can be formed.
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“Electrical Characteristics of TASIXNY/SIO2/SI Structures by Fowler-Nordheim Current Analysis”, Suh et al., Applied Physics Letters, vol. 80, No. 8, Feb. 25, 2002, pp. 1403-1405.
Paul David J.
Tsai H. Jey
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