Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-27
2010-06-29
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21632, C438S199000
Reexamination Certificate
active
07745887
ABSTRACT:
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
REFERENCES:
patent: 5885861 (1999-03-01), Gardner et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6483151 (2002-11-01), Wakabayashi et al.
patent: 6537901 (2003-03-01), Cha et al.
patent: 6815285 (2004-11-01), Choi et al.
patent: 2004/0222474 (2004-11-01), Chau et al.
patent: 2005/0059198 (2005-03-01), Visokay et al.
patent: 2005/0110098 (2005-05-01), Yoshihara
patent: 2005/0258468 (2005-11-01), Colombo et al.
patent: 2006/0084217 (2006-04-01), Luo et al.
patent: 2007/0059874 (2007-03-01), Moumen et al.
patent: 2002237589 (2002-08-01), None
patent: 2003273350 (2003-09-01), None
patent: 2004111549 (2004-04-01), None
patent: 1019960011638 (1996-08-01), None
patent: 03079444 (2003-09-01), None
patent: 2005048334 (2005-05-01), None
patent: 2006028690 (2006-03-01), None
Motamarri, S., Metal Gates for Future CMOS ICs, Internet Research from Department of Electrical and Computer Engineering, University of Houston, http://www2.egr.uh.edu/˜smotamar/CMOS/CMOS.html.
Han Sung-kee
Jung Hyung-Suk
Kim Min-Joo
Lee Jong-Ho
Samsung Electronics Co,. Ltd.
Sarkar Asok K
Volentine & Whitt PLLC
LandOfFree
Dual work function metal gate structure and related method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dual work function metal gate structure and related method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual work function metal gate structure and related method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4223824