Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S412000, C257SE29158, C257SE29160
Reexamination Certificate
active
07141858
ABSTRACT:
A gate structure for a MOSFET device comprises a gate insulation layer, a first layer of a first metal abutting the gate insulation layer, and a second layer overlying the first layer and comprising a mixture of the metal of the first layer and a second metal, the metal layers formed by the diffusion of the first metal into and through the second metal. The second metal can be used as the gate for a n-MOS transistor, and the mixture of first metal and second metal overlying a layer of the first metal can be used as a gate for a p-MOS transistor where the first metal has a work function of about 5.2 eV and the second metal has a work function of about 4.1 eV.
REFERENCES:
patent: 6166417 (2000-12-01), Bai et al.
patent: 6265258 (2001-07-01), Liang et al.
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: 6534837 (2003-03-01), Bai et al.
patent: 6537901 (2003-03-01), Cha et al.
patent: 6579775 (2003-06-01), Kizilyalli et al.
patent: 6677652 (2004-01-01), Lin et al.
patent: 6727130 (2004-04-01), Kim et al.
I. Polishchuk, P. Ranade, T.-J. King, C. Hu, “Dual Work Function CMOS Transistors by Ni-Ti Interdiffusion,” IEEE Electron Device Letters, vol. 23, No. 4, pp. 200-202, Apr. 2002.
Hu Chenming
King Tsu-Jae
Polishchuk Igor
Ranade Pushkar
Beyer Weaver & Thomas LLP
Pizarro Marcos D.
The Regents of the University of California
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