Dual work function CMOS devices utilizing carbide based...

Details Dual work function CMOS devices utilizing carbide based... Dual work function CMOS devices utilizing carbide based...

2008-11-14

2010-11-30

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S592000

Reexamination Certificate

active

07842567

ABSTRACT:
Concurrently forming different metal gate transistors having respective work functions is disclosed. In one example, a metal carbide, which has a relatively low work function, is formed over a semiconductor substrate. Oxygen and/or nitrogen are then added to the metal carbide in a second region to establish a second work function in the second region, where the metal carbide itself establishes a first work function in a first region. One or more first metal gate transistor types are then formed in the first region and one or more second metal gate transistor types are formed in the second region.

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