Dual-source plasma etchers, dual-source plasma etching methods,

Details Dual-source plasma etchers, dual-source plasma etching methods, Dual-source plasma etchers, dual-source plasma etching methods,

1998-08-28

2000-06-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 216 67, 438729, H01L 2100

Patent

active

060749539

ABSTRACT:
Plasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.

REFERENCES:
patent: 4595452 (1986-06-01), Landau et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5277751 (1994-01-01), Ogle
patent: 5368646 (1994-11-01), Yasuda et al.
patent: 5589737 (1996-12-01), Barnes et al.
patent: 5643394 (1997-07-01), Maydan et al.
patent: 5688357 (1997-11-01), Hanawa
No author; "Etch Products--TCP 9100 High-Density Oxide Etch System"; undated; 1 page.
No author; "TCP 9100 Oxide Etcher"; undated; 7 pages.

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