Dual silicon layer for chemical mechanical polishing...

Details Dual silicon layer for chemical mechanical polishing... Dual silicon layer for chemical mechanical polishing...

2006-01-03

2006-01-03

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S365000, C257S366000

Reexamination Certificate

active

06982464

ABSTRACT:
A FinFET-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

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