Dual port type semiconductor memory device realizing a high spee

Details Dual port type semiconductor memory device realizing a high spee Dual port type semiconductor memory device realizing a high spee

1987-12-18

1989-04-18

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365230, 365221, 364900, G11C 700, G11C 800, G06F 100

Patent

active

048233218

ABSTRACT:
In a dual port type semiconductor memory device (FIFO), a register is provided between a read side of a memory cell array and a data output. When data is read from the memory cell array to the data output, a content stored in the memory cell array is transmitted in advance by a preceding read instruction clock to the register, thereby enhancing the read operation speed.

REFERENCES:
patent: 4138732 (1979-02-01), Suzuki et al.
patent: 4433394 (1984-02-01), Torii et al.

Affiliated with

Also associated with

Rating

Dual port type semiconductor memory device realizing a high spee does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual port type semiconductor memory device realizing a high spee, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual port type semiconductor memory device realizing a high spee will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2400559