Static information storage and retrieval – Addressing – Multiple port access
Reexamination Certificate
2005-03-01
2005-03-01
Lam, David (Department: 2818)
Static information storage and retrieval
Addressing
Multiple port access
C365S189050, C365S203000
Reexamination Certificate
active
06862245
ABSTRACT:
The present invention includes a dual port static memory cell and a semiconductor memory device having the same, the dual port static memory cell comprising a first transmission gate having a gate connected to a word line and connected between a bit line and a first node, a second transmission gate having a gate connected to the word line and connected between a complementary bit line and a second node, a latch connected between the first node and the second node, and a PMOS transistor having a gate connected to a scan control line and connected between the second node and a scan bit line.
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Kim Tae-Hyoung
Song Tae-Joong
Lam David
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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