Static information storage and retrieval – Addressing – Multiple port access
Reexamination Certificate
2005-07-29
2008-07-29
Dinh, Son (Department: 2824)
Static information storage and retrieval
Addressing
Multiple port access
C365S154000, C365S063000
Reexamination Certificate
active
07405994
ABSTRACT:
Disclosed are improved layouts for memory cell and memory cell arrays. A memory cell array of multiple memory cells connected by signal lines that twist in connecting the array. Further, an eight transistor memory cell that comprises different resistive paths as seen by the signal lines electrically connected to the cell and asymmetric pass devices associated with those resistive paths. Furthermore, an eight transistor memory cell that includes butt contacts.
REFERENCES:
patent: 5955768 (1999-09-01), Liaw et al.
patent: 5973985 (1999-10-01), Ferrant
patent: 6370078 (2002-04-01), Wik et al.
patent: 6498758 (2002-12-01), Pomar et al.
patent: 6665204 (2003-12-01), Takeda
patent: 6756652 (2004-06-01), Yano et al.
patent: 6822300 (2004-11-01), Nii
patent: 7023056 (2006-04-01), Liaw
patent: 7319602 (2008-01-01), Srinivasan et al.
patent: 2001/0043487 (2001-11-01), Nii et al.
patent: 2003/0048256 (2003-03-01), Salmon
patent: 2004/0120209 (2004-06-01), Lee et al.
patent: 2005/0047256 (2005-03-01), Yang
patent: 2006/0028860 (2006-02-01), Lien et al.
Nii, Koji, et al., “A 90nm Dual-Port SRAM with 2.04um2 8T-Thin Cell Using Dynamically-Controlled Column Bias Scheme”, 2004 IEEE International Solid-State Circuits Conference, Session 27, 2004, pp. 27.9.
Wolf, Stanley, Ph.D., “Silicon Processing for the VLSI Era”, vol. 2: Process Integration, 1990, pp. 160-161.
World Wide Web, http://www.hpcwire.com/dsstar/04/0224/107497.html, “Renesas Technology Develops 90nm Dual-Port SRAM for SoC”, DSstar, printed on Apr. 6, 2005, 3 pages.
Dinh Son
Haynes & Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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