Dual poly deposition and through gate oxide implants

Details Dual poly deposition and through gate oxide implants Dual poly deposition and through gate oxide implants

2006-05-26

2008-10-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S199000

Reexamination Certificate

active

07435638

ABSTRACT:
Dopants are implanted at relatively high energies into an unmasked first region of a semiconductor substrate through a thin layer of gate electrode material and a gate dielectric layer. Lower energy dopants are then implanted into the thin layer of gate electrode material. The first region is then masked off, and the process is repeated in a previously masked, but now unmasked, second region of the semiconductor substrate. A second (and usually thicker) layer of gate electrode material is then formed over the thin layer of gate electrode material. The layer of thick gate electrode material, the layer of thin gate electrode material and the layer of gate dielectric material are patterned to form one or more gate structures over the doped regions of the substrate. Source and drain regions are formed in the substrate regions adjacent to the gate structures to establish one or more MOS transistors.

REFERENCES:
patent: 5789286 (1998-08-01), Subbanna
patent: 6261885 (2001-07-01), Cheek et al.
patent: 6881631 (2005-04-01), Saito et al.
patent: 2006/0099812 (2006-05-01), Krull
Murarka, et al. “Electronic materials: science and technology” Academic Press, 1989, pp. 234-235 and 239, ISBN 0125111207, San Diego.

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