Dual-oxide transistors for the improvement of reliability...

Details Dual-oxide transistors for the improvement of reliability... Dual-oxide transistors for the improvement of reliability...

2005-10-04

2005-10-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S302000

Reexamination Certificate

active

06951792

ABSTRACT:
The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate.

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