Dual mode ion source for ion implantation

Details Dual mode ion source for ion implantation Dual mode ion source for ion implantation

2005-11-07

2010-11-23

Owens, Douglas W (Department: 2821)

Radiant energy

Ion generation

Field ionization type

C315S111810

Reexamination Certificate

active

07838842

ABSTRACT:
An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomers implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

REFERENCES:
patent: 2754422 (1956-07-01), Lofgrenetal
patent: 4017403 (1977-04-01), Freeman
patent: 4135093 (1979-01-01), Kim
patent: 4258266 (1981-03-01), Robinson et al.
patent: 4579144 (1986-04-01), Lin et al.
patent: 4845366 (1989-07-01), Hoffman et al.
patent: 4985657 (1991-01-01), Campbell
patent: 5306921 (1994-04-01), Tanaka et al.
patent: 5306922 (1994-04-01), O'Connor
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5523652 (1996-06-01), Sferlazzo et al.
patent: 5576600 (1996-11-01), McCrary et al.
patent: 5607509 (1997-03-01), Schumacher et al.
patent: 5633506 (1997-05-01), Blake
patent: 5703372 (1997-12-01), Horsky et al.
patent: 5780862 (1998-07-01), Siess
patent: 5904567 (1999-05-01), Yamazaki
patent: 5939831 (1999-08-01), Fong et al.
patent: 6046546 (2000-04-01), Porter et al.
patent: 6205948 (2001-03-01), Guenzel
patent: 6259091 (2001-07-01), Eiden et al.
patent: 6288403 (2001-09-01), Horsky et al.
patent: 6358431 (2002-03-01), Stirling et al.
patent: 6452338 (2002-09-01), Horsky et al.
patent: 6479785 (2002-11-01), Fugo et al.
patent: 6686595 (2004-02-01), Horsky
patent: 6744214 (2004-06-01), Horsky
patent: 6777686 (2004-08-01), Olson et al.
patent: 6805779 (2004-10-01), Chistyakov
patent: 6975073 (2005-12-01), Wakalopulos
patent: 7022999 (2006-04-01), Horsky et al.
patent: 7107929 (2006-09-01), Horsky et al.
patent: 7112804 (2006-09-01), Horsky et al.
patent: 7185602 (2007-03-01), Horsky et al.
patent: 2003/0079688 (2003-05-01), Walther et al.
patent: 2003/0197129 (2003-10-01), Murrell et al.
patent: 2004/0000647 (2004-01-01), Horsky
patent: 2004/0002202 (2004-01-01), Horsky et al.
patent: 2004/0097193 (2004-05-01), Horsky et al.
patent: 2005/0269520 (2005-12-01), Horsky et al.
patent: 2006/0097645 (2006-05-01), Horsky
patent: 2008/0087219 (2008-04-01), Horsky
U.S. Appl. No. 11/648,378, filed Dec. 29, 2006, SemEquip.
U.S. Appl. No. 11/648,366, filed Dec. 29, 2006, SemEquip.
U.S. Appl. No. 11/527,994, filed Sep. 26, 2006, SemEquip.
Shen et al., J. Chem. Phys. 101 (3), pp. 2261-2266, Aug. 1, 1994.
Greenwood et al., Chemistry of the Elements, 2nd Ed, 2001, Ch. 12, p. 479. Bunerworth-Heimann Publishers, Oxford, England.
Greenwood et al., Chemistry of the Elements, 2ndEd., 2001, Ch. 13, p. 551, Bunerworth-Heiemann Publishers, Oxford, England.
Honig et al , RCA Review, 30, p. 285, Jun. 1969.
U.S. Appl. No. 11/940,126, filed Nov. 14, 2007 Horsky et al.
International Search Report from PCT/US06/4318, mailed Feb. 28, 2007.

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