Dual metal silicides for lowering contact resistance

Details Dual metal silicides for lowering contact resistance Dual metal silicides for lowering contact resistance

2006-12-18

2011-10-18

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S415000, C257S369000

Reexamination Certificate

active

08039284

ABSTRACT:
A method for forming a semiconductor structure includes: providing a semiconductor substrate; forming an NMOS device at a surface of the semiconductor substrate, which comprises forming a first source/drain electrode on a first source/drain region of the NMOS device, wherein the first source/drain electrode has a first barrier height; forming a PMOS device at the surface of the semiconductor substrate comprising forming a second source/drain electrode on a second source/drain region of the PMOS device, wherein the second source/drain electrode has a second barrier height, and wherein the first barrier height is different from the second barrier height; forming a first stressed film having a first intrinsic stress over the NMOS device; and forming a second stressed film having a second intrinsic stress over the PMOS device, wherein the first intrinsic stress is more tensile than the second intrinsic stress.

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