Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-29
2009-10-20
Gurley, Lynne A. (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C257SE21156, C257SE29161
Reexamination Certificate
active
07605077
ABSTRACT:
An integration scheme that enables full silicidation (FUSI) of the nFET and pFET gate electrodes at the same time as that of the source/drain regions is provided. The FUSI of the gate electrodes eliminates the gate depletion problem that is observed with polysilicon gate electrodes. In addition, the inventive integration scheme creates different silicon thicknesses of the gate electrode just prior to silicidation. This feature of the present invention allows for fabricating nFETs and pFETs that have a band edge workfunction that is tailored for the specific device region.
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Henson William K.
Mandelman Jack A.
Rim Kern
Arena Andrew O.
Gurley Lynne A.
International Business Machines - Corporation
Schurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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