Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-12-16
2009-08-04
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S392000, C257S391000, C257S369000, C257SE21637
Reexamination Certificate
active
07569466
ABSTRACT:
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
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patent: 2006/0172516 (2006-08-01), Adetutu et al.
patent: 2007/0048920 (2007-03-01), Song et al.
Yu et al., “Direct nitridation of high-k metal oxide thin films using argon excimer sources”, Electronics Letters, Oct. 27, 2005, vol. 41, No. 22, pp. 1210-1211.
Callegari Alessandro C.
Chudzik Michael P.
Doris Bruce B.
Narayanan Vijay
Paruchuri Vamsi K.
Coleman W. David
International Business Machines - Corporation
McCall-Shepard Sonya D
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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