Dual metal-alloy nitride gate electrodes

Details Dual metal-alloy nitride gate electrodes Dual metal-alloy nitride gate electrodes

2005-05-17

2005-05-17

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S590000, C438S592000

Reexamination Certificate

active

06893924

ABSTRACT:
An embodiment of the invention is a gate electrode70having a nitrided high work function metal alloy170and a low work function nitrided metal alloy190. Another embodiment of the invention is a method of manufacturing a gate electrode70that includes forming and then patterning and etching a layer of high work function nitrided metal alloy170, forming a layer of low work function nitrided metal alloy190, and then patterning and etching layers170and190.

REFERENCES:
Jaehoon Lee et al. “Tunable Work Function Dual Metal Gate Technology for Bulk and Non-Bulk CMOS” International Electronic Device Meeting (IEDM) 2002.
S.B. Samavedam et al. “Dual-Metal Gate CMOS with HfO2Gate Dielectric” International Electronic Device Meeting (IEDM) 2002.
Huicai Zhong et al. “Properties of Ru-Ta Alloys as Gate Electrodes for NMOS and PMOS Silicon Devices” International Electronic Device Meeting (IEDM) 2001.
Dae-Gyu Park et al. “Robust Temary Metal Gate Electrodes for Dual Gate CMOS Devices” International Electronic Device Meeting (IEDM) 2001.

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