Dual liner capping layer interconnect structure and method

Details Dual liner capping layer interconnect structure and method Dual liner capping layer interconnect structure and method

2006-11-29

2009-08-18

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21591

Reexamination Certificate

active

07576003

ABSTRACT:
A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress.

REFERENCES:
patent: 3895156 (1975-07-01), Hammond
patent: 4062720 (1977-12-01), Alcorn et al.
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6303505 (2001-10-01), Ngo et al.
patent: 6319819 (2001-11-01), Besser et al.
patent: 6323554 (2001-11-01), Joshi et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6383925 (2002-05-01), Ngo et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6506677 (2003-01-01), Avanzino et al.
patent: 6750541 (2004-06-01), Ohtsuka et al.
patent: 6764951 (2004-07-01), van Ngo
patent: 6797652 (2004-09-01), Ngo et al.
patent: 6818557 (2004-11-01), Ngo et al.
patent: 7138332 (2006-11-01), Goundar
patent: 2004/0130030 (2004-07-01), Kunimune et al.
patent: 2005/0282404 (2005-12-01), Nguyen et al.
patent: 2006/0030143 (2006-02-01), Ivanov
patent: 2006/0046502 (2006-03-01), Ngo et al.
patent: 2006/0172527 (2006-08-01), Marxsen et al.
patent: 2007/0123044 (2007-05-01), Hohage et al.

Affiliated with

Also associated with

Rating

Dual liner capping layer interconnect structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual liner capping layer interconnect structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual liner capping layer interconnect structure and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4089240