Dual layer Semiconductor Devices

Details Dual layer Semiconductor Devices Dual layer Semiconductor Devices

2005-12-13

2005-12-13

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S933000

Reexamination Certificate

active

06974735

ABSTRACT:
A semiconductor-based device includes a channel layer, which includes a distal layer and a proximal layer in contact with the distal layer. The distal layer supports at least a portion of hole conduction for at least one p-channel component, and the proximal layer supports at least a portion of electron conduction for at least one n-channel component. The proximal layer has a thickness that permits a hole wave function to effectively extend from the proximal layer into the distal layer to facilitate hole conduction by the distal layer. A method for fabricating a semiconductor-based device includes providing a distal portion of a channel layer and providing a proximal portion of the channel layer.

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