Dual layer barrier film techniques to prevent resist poisoning

Details Dual layer barrier film techniques to prevent resist poisoning Dual layer barrier film techniques to prevent resist poisoning

2006-07-04

2006-07-04

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S702000, C438S763000

Reexamination Certificate

active

07071094

ABSTRACT:
Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.

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