Dual insulating layer diode with asymmetric interface state...

Details Dual insulating layer diode with asymmetric interface state... Dual insulating layer diode with asymmetric interface state...

2011-03-01

2011-03-01

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S656000, C257S004000, C257SE29331

Reexamination Certificate

active

07897453

ABSTRACT:
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. The diode is a metal-insulator diode having a first metal layer, a first insulating layer, a second insulating layer and a second metal layer. At least one asymmetric interface state is provided at the intersection of at least two of the layers to increase the ratio of the diode's on-current to its reverse bias leakage current. In various examples, the asymmetric interface state is formed by a positive or negative sheet charge that alters the barrier height and/or electric field at one or more portions of the diode. Two-terminal devices such as passive element memory cells can utilize the diode as a steering element in series with a state change element. The devices can be formed using pillar structures at the intersections of upper and lower conductors.

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