Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-14
2009-12-22
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21637
Reexamination Certificate
active
07635897
ABSTRACT:
In one embodiment, a semiconductor device includes at least two stacked gate structures formed on a substrate. The two stacked gate structures each include a semiconductor layer and a metal layer over the semiconductor layer. The two stacked gate structures on the substrate are characterized by differential intermediate layers, one of the two structures including an ohmic layer and the other of the two structures not including an ohmic layer.
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patent: 6743704 (2004-06-01), Takahashi
patent: 2001/0030342 (2001-10-01), Ohnishi et al.
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patent: 2002/0102796 (2002-08-01), Lee et al.
patent: 2005/0073011 (2005-04-01), Taguwa
Fumio Ohtake, Yasushi Akasaka, et al. A Thin Amorphous Silicon Buffer Process for Suppression of W Polymetal Gate Depletion in PMOS'IEEE 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 74-75.
Cha Taeho
Lee Byung-hak
Lee Janghee
Lim Dongchan
Park Hee-sook
F. Chau & Associates LLC
Movva Amar
Samsung Electronics Co,. Ltd.
Smith Bradley K
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