Dual gate oxide process with increased reliability

Details Dual gate oxide process with increased reliability Dual gate oxide process with increased reliability

1996-09-06

2000-01-18

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

060157321

ABSTRACT:
Within a dual gate oxide process, gate oxide is formed within regions on a substrate. Gate material, such as polysilicon, is placed over a first region. The gate material extends over field oxide surrounding the first region. Gate oxide within a second region is stripped. The gate material over the first region prevents gate oxide within the first region from being stripped. A new layer of gate oxide is formed within the second region. A first transistor gate is formed within the second region. The gate material which is over the first region is etched to form a second transistor gate.

REFERENCES:
patent: 5218511 (1993-06-01), Nariani
patent: 5633181 (1997-05-01), Hayashi
patent: 5656533 (1997-08-01), Kim
patent: 5668035 (1997-09-01), Fang et al.

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