Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-10-09
2007-10-09
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S185130, C365S185260, C365S096000
Reexamination Certificate
active
11239903
ABSTRACT:
A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.
REFERENCES:
patent: 6243294 (2001-06-01), Rao et al.
Alavi Mohsen
De Vivek K.
Keshavarzi Ali
Khellah Muhammad M.
Paillet Fabrice
Blakely , Sokoloff, Taylor & Zafman LLP
Luu Pho M.
Nguyen Van Thu
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