Dual gate oxide high-voltage semiconductor device and method...

Details Dual gate oxide high-voltage semiconductor device and method... Dual gate oxide high-voltage semiconductor device and method...

2007-09-11

2007-09-11

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S262000, C438S275000

Reexamination Certificate

active

11003991

ABSTRACT:
A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer formed over the buried oxide layer, and a top oxide layer formed over the silicon layer. Adjacent an edge of the top oxide layer, a dual gate oxide is formed. The dual gate oxide allows both specific-on-resistance and breakdown voltage of the device to be optimized.

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