Dual damascene process using a single photo mask

Details Dual damascene process using a single photo mask Dual damascene process using a single photo mask

2005-02-22

2005-02-22

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S317000, C430S323000, C430S324000, C438S622000, C438S638000

Reexamination Certificate

active

06858377

ABSTRACT:
A dual damascene process using a single photo mask in which a photo mask having patterns with different transparency is applied. A mask layer with a dual layer opening is formed first and then serves as an etching mask to form a dual opening in the dielectric layer. Then a metal layer is filled in the dual layer opening in the dielectric layer to form a dual damascene structure. Therefore, only a single photolithography process is necessary and overlay due to misalignment can be avoided.

REFERENCES:
patent: 6180512 (2001-01-01), Dai
patent: 20030027419 (2003-02-01), Chen

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