Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-10
2008-10-14
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S639000, C257SE21577, C257SE21584
Reexamination Certificate
active
07435676
ABSTRACT:
Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification/consumption during the subsequent ashing step during which the polymeric film is removed.
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Dalton Timothy J.
Fuller Nicholas C.
Nitta Satyanarayana V.
Geyer Scott B.
International Business Machines - Corporation
Nikmanesh Seahvosh J
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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