Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-10-25
2005-10-25
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S759000, C257S760000, C257S774000
Reexamination Certificate
active
06958540
ABSTRACT:
Interconnect structures are disclosed for forming dual damascene back-end-of-line (BEOL) structure using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
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patent: 6383821 (2002-05-01), Young et al.
patent: 2004/0108217 (2004-06-01), Dubin
Cooney, III Edward
Gambino Jeffrey
Lane Michael
Motsiff William Thomas
Simon Andrew
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