Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field
Reexamination Certificate
2008-04-15
2008-04-15
Sherry, Michael (Department: 2836)
Electricity: electrical systems and devices
Electric charge generating or conducting means
Use of forces of electric charge or field
C216S059000, C315S111210, C156S345280
Reexamination Certificate
active
11127036
ABSTRACT:
A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
REFERENCES:
patent: 2951960 (1960-09-01), Watrous, Jr.
patent: 2967926 (1961-01-01), Edstrom
patent: 3355615 (1967-11-01), Le Bihan et al.
patent: 3610986 (1971-10-01), King
patent: 4458180 (1984-07-01), Sohval
patent: 4464223 (1984-08-01), Gorin
patent: 4570106 (1986-02-01), Sohval et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4888518 (1989-12-01), Grunwald
patent: 4973883 (1990-11-01), Hirose et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5006760 (1991-04-01), Drake, Jr.
patent: 5017835 (1991-05-01), Oechsner
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5053678 (1991-10-01), Koike et al.
patent: 5055853 (1991-10-01), Garnier
patent: 5077499 (1991-12-01), Oku
patent: 5089083 (1992-02-01), Kojima et al.
patent: 5107170 (1992-04-01), Ishikawa et al.
patent: 5115167 (1992-05-01), Ootera et al.
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5175472 (1992-12-01), Johnson et al.
patent: 5195045 (1993-03-01), Keane et al.
patent: 5198725 (1993-03-01), Chen et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5218271 (1993-06-01), Egorov et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5246532 (1993-09-01), Ishida
patent: 5256931 (1993-10-01), Bernadet
patent: 5272417 (1993-12-01), Ohmi
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5274306 (1993-12-01), Kaufman et al.
patent: 5279669 (1994-01-01), Lee
patent: 5280219 (1994-01-01), Ghanbari
patent: 5300460 (1994-04-01), Collins et al.
patent: 5314603 (1994-05-01), Sugiyama et al.
patent: 5325019 (1994-06-01), Miller et al.
patent: 5401351 (1995-03-01), Samukawa
patent: 5432315 (1995-07-01), Kaji et al.
patent: 5453305 (1995-09-01), Lee
patent: 5463525 (1995-10-01), Barnes et al.
patent: 5467013 (1995-11-01), Williams et al.
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5537004 (1996-07-01), Imahashi et al.
patent: 5554223 (1996-09-01), Imahashi
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5567268 (1996-10-01), Kadomura
patent: 5576600 (1996-11-01), McCrary et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5592055 (1997-01-01), Capacci et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5660671 (1997-08-01), Harada et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5674321 (1997-10-01), Pu et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5705019 (1998-01-01), Yamada et al.
patent: 5707486 (1998-01-01), Collins
patent: 5710486 (1998-01-01), Ye et al.
patent: 5720826 (1998-02-01), Hayashi et al.
patent: 5733511 (1998-03-01), De Francesco
patent: 5770922 (1998-06-01), Gerrish et al.
patent: 5792376 (1998-08-01), Kanai et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5849136 (1998-12-01), Mintz et al.
patent: 5849372 (1998-12-01), Annaratone et al.
patent: 5855685 (1999-01-01), Tobe et al.
patent: 5858819 (1999-01-01), Miyasaka
patent: 5863376 (1999-01-01), Wicker et al.
patent: 5866986 (1999-02-01), Pennington
patent: 5868848 (1999-02-01), Tsukamoto
patent: 5885358 (1999-03-01), Maydan et al.
patent: 5904799 (1999-05-01), Donohoe
patent: 5914568 (1999-06-01), Nonaka
patent: 5929717 (1999-07-01), Richardson et al.
patent: 5936481 (1999-08-01), Fuji
patent: 5939886 (1999-08-01), Turner et al.
patent: 5942074 (1999-08-01), Lenz et al.
patent: 5971591 (1999-10-01), Vona et al.
patent: 5997962 (1999-12-01), Ogasawara et al.
patent: 6016131 (2000-01-01), Sato et al.
patent: 6043608 (2000-03-01), Samukawa et al.
patent: 6089182 (2000-07-01), Hama
patent: 6093457 (2000-07-01), Okumura et al.
patent: 6095084 (2000-08-01), Shamouilian et al.
patent: 6096160 (2000-08-01), Kadomura
patent: 6106663 (2000-08-01), Kuthi et al.
patent: 6110395 (2000-08-01), Gibson, Jr.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6142096 (2000-11-01), Sakai et al.
patent: 6152071 (2000-11-01), Akiyama et al.
patent: 6155200 (2000-12-01), Horijke et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6174450 (2001-01-01), Patrick et al.
patent: 6188564 (2001-02-01), Hao
patent: 6213050 (2001-04-01), Liu et al.
patent: 6218312 (2001-04-01), Collins et al.
patent: 6245190 (2001-06-01), Masuda et al.
patent: 6251216 (2001-06-01), Okamura et al.
patent: 6262538 (2001-07-01), Keller
patent: 6290806 (2001-09-01), Donohoe
patent: 6291999 (2001-09-01), Nishimori et al.
patent: 6337292 (2002-01-01), Kim et al.
patent: 6346915 (2002-02-01), Okumura et al.
patent: RE37580 (2002-03-01), Barnes et al.
patent: 6444084 (2002-09-01), Collins
patent: 6449568 (2002-09-01), Gerrish
patent: 6451703 (2002-09-01), Liu et al.
patent: 6462481 (2002-10-01), Holland et al.
patent: 6528751 (2003-03-01), Hoffman et al.
patent: 6586886 (2003-07-01), Katz et al.
patent: 6652712 (2003-11-01), Wang et al.
patent: 6894245 (2005-05-01), Hoffman et al.
patent: 2002/0108933 (2002-08-01), Hoffman et al.
patent: 2002/0139477 (2002-10-01), Ni et al.
patent: 2003/0132195 (2003-07-01), Edamura et al.
patent: 2003/0168427 (2003-09-01), Flamm et al.
patent: 2007/0127188 (2007-06-01), Yang et al.
patent: 0 343 500 (1989-11-01), None
patent: 0 678 903 (1995-10-01), None
patent: 0 719 447 (1998-07-01), None
patent: WO 01/71765 (2001-09-01), None
King, Ronald W.P., “Transmission-Line Theory”, Dover Publications, Inc., 1965, New York, pp. 1-10 and 282-286.
Burns Douglas H.
Hoffman Daniel J.
Kim Kwang-Soo
Lee Won-seok
Shannon Steven C.
Applied Materials Inc.
Patel Dharti H
Sherry Michael
Wallace Robert M.
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