Drying etching method

Details Drying etching method Drying etching method

1991-08-14

1993-11-09

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156656, 156657, 156662, 156665, 20419232, 20419235, 20419237, H01L 2100

Patent

active

052599221

ABSTRACT:
A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

REFERENCES:
patent: 4158589 (1979-06-01), Keller et al.
patent: 4668366 (1987-05-01), Zarowin
patent: 4798650 (1989-01-01), Nakamura et al.
patent: 5110438 (1992-05-01), Ohmi et al.
"Advanced Plasma Processing Equipment Without Wafer Surface Damage And Chamber Material Contamination" by H. Goto et al; Extended Abstracts of the 22nd (1980 International) Conference on Solid State Devices asnd Materials, Sendai, 1990, pp. 1147-1150.

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