Dry process for removal of undesirable oxide and/or silicon resi

Details Dry process for removal of undesirable oxide and/or silicon resi Dry process for removal of undesirable oxide and/or silicon resi

1990-12-04

1993-07-20

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, H01L 21308

Patent

active

052289508

ABSTRACT:
A process is disclosed for the removal of residual oxide and/or silicon materials from a semiconductor wafer such as silicon-rich oxide residues or polysilicon stringers from the sidewalls of lines or steps formed over semiconductor wafers during the construction of integrated circuit structures without removing the wafer from the vacuum apparatus used in forming the lines on the wafer using a high pressure magnetically enhanced plasma etch using an NF.sub.3 -containing gas containing at least about 40 volume % NF.sub.3 as the etchant gas.

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