Dry microlithography process

Details Dry microlithography process Dry microlithography process

1994-05-31

1995-10-24

Fourson, George

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 24, 437228, 437238, 437239, H01L 21302

Patent

active

054606934

ABSTRACT:
An all-dry microlithography process, where a fluorinated layer 30 is deposited on a processable layer 18 of a semiconductor wafer, and regions of the fluorinated layer 30 are exposed to a masked radiation source so that exposed regions and unexposed areas 31 are formed in the fluorinated layer 30. An oxide layer is grown on the fluorinated layer, forming thicker region 34 of oxide on the unexposed areas 31 of the fluorinated layer 30, and forming thinner regions 32 of oxide on the exposed regions of the fluorinated layer 30. The oxide layer is then etched, removing thinner regions 32 of the oxide layer but leaving at least a fraction of the thicker portions 34 of the oxide layer to be used as a patterned hard mask. Then the exposed fluorinated layer not covered by the patterned oxide hard mask, is etched, to expose areas of the processable layer 18 not covered by the oxide hard mask, for subsequent patterned processing. The subsequent patterned processing may be an etch process for pattern transfer to the processable layer, a doping process to dope the exposed regions of the processable layer, or another process such as a deposition step. The all-dry lithography process can be completed in an integrated environment, such as a cluster tool, resulting in improved manufacturing cycle time and increased yields. The dry photosensitive layer may be deposited using PECVD at low temperatures, and is compatible with all other semiconductor device fabrication process flows.

REFERENCES:
patent: 4578155 (1986-03-01), Halliwell et al.
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4605566 (1986-08-01), Matsui et al.
patent: 4608117 (1986-08-01), Ehrlich et al.
patent: 4612085 (1986-09-01), Jelks et al.
patent: 4624736 (1986-11-01), Gee et al.
patent: 4748134 (1988-05-01), Holland et al.
patent: 4810601 (1989-03-01), Allen et al.
patent: 4834834 (1989-05-01), Ehrlich et al.
patent: 4842989 (1989-06-01), Taniguchi et al.
patent: 4882008 (1989-11-01), Garza et al.
patent: 4935377 (1990-06-01), Strifler et al.
patent: 4945065 (1990-07-01), Gregory et al.
patent: 4978594 (1990-12-01), Bruce et al.
patent: 4994140 (1991-02-01), Kenzo et al.
patent: 5015323 (1991-05-01), Gallagher et al.
patent: 5098866 (1992-03-01), Clark et al.
patent: 5106770 (1992-04-01), Bulat et al.
patent: 5223445 (1993-06-01), Fuse
patent: 5312716 (1994-05-01), Unoki et al.
patent: 5358894 (1994-10-01), Fazan et al.
M. J. Bowden, "Forefront of Research on Resists", Solid State Technology/Jun. 1981, pp. 73-87.
Cheryl F. Corallo and Gar B. Hoflund, "An Energy-resolved, Electron-stimulated Desorption Study of Hydrogen from Cleaned and Oxidized Si(100)", Surface and Interface Analysis, vol. 12, 1988, pp. 297-302.
R. S. becker, G. S. Higashi, Y. J. Chabaland A. J. Becker, "Atomic Scale Conversion of Clean Si(111): H-1.times.1 to Si(111)-2.times.1 by Electron-Stimulated Desorption", Physical Reivew Letters vol. 65 No. 15, Oct. 8, 1990, pp. 1917-1920.
E. C. Ekwelundo and A. Ignatiev, "Electron Stimulated Desorption of Positive Ions From an Adsorbate-Covered Si(100) Surface", Surface Science 215 (1989) pp. 91-101.
R. M. Wallace, P. A. Taylor, W. J. Choyke and J. T. Yates, Jr., "An ESDIAD Study of Chemisorbed Hydrogen on Clean and H-exposed Si(111)-(7.times.7)", Surface Science 239 (1990) pp. 1-12.
John J. Boland, "Structure of the H-Saturated Si(100) Surface", Physical Review Letters vol. 65, No. 26, Dec. 24, 1990, pp. 3325-3328.
S. C. McNevin, "Radio Frequency Plasma Etching Of Si/SiO.sub.2 by Cl.sub.2 /O.sub.2 : Improvements Resulting From the Time Modulation Of the Processing Gases", J. Vac. Sci. Technol. B 8 (6), Nov./Dec. 1990, pp. 11185-1191.
P. Dumas, "Coupling of as Adsorbate Vibration to a Substrate Surface Phonon: H on Si(111)", Physical Review Letters, vol. 65 No. 9, Aug. 27, 1990, pp. 1124-1127.
J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, "Modification of Hydrogen-Passivated Silicon By a Scanning Tunneling Microscope By a Scanning Tunneling Microscope Operating in Air", Appl. Phys. Lett., vol. 56, No. 20, May 14, 1990, pp. 2001-2003.
W. R. Brunsvoid, D. M. Crockatt, G. J. Hefferon, C. F. Lyons, "Resist Technology for Submicrometer Optical Lithography", POptical Engineering/Apr. 1987/vol. 26 No. 4, pp. 331-336.
Makoto Nakase, "Potential of Optical Lithography", POptical Engineering/Apr. 1987/vol. 26 No. 4, pp. 319-324.
Yukinori Ochiai, Shinji Matsui, Katsumi Mori, "Focused Ion Beam Technology", Solid State Technology/Nov. 1987, pp. 75-79.
E. Ong and E. L. Hu, "Multilayer Resists for Fine Line Optical Lithography", Solid State Technology/Jun. 1984, pp. 155-160.
Gene E. Fuller, "Optical Lithography Status", Solid State Technology/Sep. 1987, pp. 113-118.
Rebecca J. Gale, Mike Tipton, and Tim Wooldridge, "Photolithography and Dry Etch for the MMST Program", TI Technical Journal, Sep.-Oct. 1992, pp. 65-75.
S. M. Sze, VLSI Technology, Second Edition, Copyright 1988, by Bell Telephone Laboratories, Inc. p. 114.

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