Dry etching process utilizing a recessed electrode

Details Dry etching process utilizing a recessed electrode Dry etching process utilizing a recessed electrode

1994-02-28

1995-08-22

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 118723E, H05H 100

Patent

active

054436893

ABSTRACT:
A dry etching apparatus is provided with parallel electrodes confronting each other, and a high frequency voltage is impressed between the electrodes. The electrode for holding a base material has a recess in its surface and the surface of the electrode is covered with an insulating layer so that part of the structure constituted by the insulating layer and electrode is not in contact with the base material.

REFERENCES:
patent: 4793975 (1988-12-01), Drage
patent: 4897171 (1990-01-01), Ohmi
patent: 4968374 (1990-11-01), Tsukada et al.
Alfred Johnsen et al., "A Physical Phenomenon and its Applications to Telegraphy, Telephony, etc.", IEE Journal, vol. 61, No. 320, pp. 713-715 Jul. 1923.

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