Dry etching process for semiconductor

Details Dry etching process for semiconductor Dry etching process for semiconductor

1993-11-17

1995-06-13

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C23F 100

Patent

active

054239419

ABSTRACT:
A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4226665 (1980-10-01), Mogab
patent: 4256634 (1981-03-01), Levinstein et al.
patent: 4450042 (1984-05-01), Purdes
patent: 4784720 (1988-11-01), Douglas
patent: 4855017 (1989-08-01), Douglas
patent: 5078833 (1992-01-01), Kadomura

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