Dry etching process for semiconductor

Details Dry etching process for semiconductor Dry etching process for semiconductor

1993-11-17

1996-06-04

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 1566461, 437225, H01L 2100

Patent

active

055229662

ABSTRACT:
A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N.sub.2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4226665 (1980-10-01), Mogab
patent: 4256634 (1981-03-01), Levinstein et al.
patent: 4450042 (1984-05-01), Purdes
patent: 4784720 (1988-11-01), Douglas
patent: 4855017 (1989-08-01), Douglas

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