Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-09-17
2000-05-02
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438627, 438625, 438689, 438712, H01L 214763
Patent
active
060572302
ABSTRACT:
A method for fabricating a copper, or a copper-titanium nitride-titanium, interconnect structure, using a low temperature RIE patterning procedure, has been developed. The RIE patterning procedure features the use of SiCl.sub.4 and nitrogen, as reactants, with amount of nitrogen supplied, being equal to, or greater than, the SiCl.sub.4 level. The addition of nitrogen, to the etching ambient, results in the formation of a non-cross-linked, by-product, which is easily removed during the patterning procedure, this not interfering with the creation of interconnect structure. Without the addition of nitrogen, a cross-linked, by-product, would be formed, during the low temperature RIE procedure, with the redeposited, cross-linked, by-product, interfering with the patterning of the copper interconnect structure.
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Ackerman Stephen B.
Bowers Charles
Hullinger Robert A.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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