Dry etching of multi-layer structures

Details Dry etching of multi-layer structures Dry etching of multi-layer structures

1986-03-20

1987-07-14

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, H01L 21306, H01L 21308

Patent

active

046800867

ABSTRACT:
A method for etching multi-layer structures particularly suited for patterning refractory metal silicide/polysilicon sandwiches. A first dry etch process is carried out in a first dry etch chamber and is selected to rapidly and anisotropically etch the uppermost layer, typically a refractory metal silicide. A second dry etch process is carried out in a second etch chamber and is selected to rapidly and anisotropically etch the underlying layer, typically polysilicon, while having a high selectivity to any material underlying the underlying layer. The first process is preferably a fluorine-chemistry process with low frequency RF energy and the substrate resting on the grounded electrode. The second process is preferrably a chlorine-chemistry process with high frequency RF energy and the substrate resting on the powered electrode.

REFERENCES:
patent: 4253907 (1981-03-01), Parry et al.
patent: 4414057 (1983-11-01), Bourassa et al.
patent: 4464223 (1984-08-01), Gorin
patent: 4563240 (1986-01-01), Shibata et al.

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