Dry etching method of multilayer film

Details Dry etching method of multilayer film Dry etching method of multilayer film

1998-05-04

2000-11-14

Krynski, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 58, 216 67, 216 69, 216 70, 216 72, 216 79, 438682, 438683, 438706, 438719, 438721, 438723, 438738, 438743, C23F 100, C03C 2568

Patent

active

061465429

ABSTRACT:
A dry etching method of a multilayer film for a semiconductor device includes a first step for etching a metallic layer or a metallic silicide layer by use of a compound gas plasma mixed by a first gas including at least two of O.sub.2, N.sub.2, CO, a second gas including fluorine, a third gas including chlorine, and a fourth gas including bromine, a second step for processing an entire structure formed on the semiconductor substrate by use of a fluorine gas plasma including carbon, and a third step for etching the polysilicon layer by use of a gas plasma including chlorine. The dry etching method prevents an undercut generation along the sidewalls as etching targets, as well as residues remaining in the substrate, thereby improving a reliability of the semiconductor device. The method omits an additional refining process, thereby decreasing a fabrication time of the semiconductor device, improving productivity and realizing cost reduction of the semiconductor device.

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Derwent Abstract of JP 11145145 A (priority Nov. 3, 1997), May 28, 1999.

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