Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2010-10-05
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S213000, C257S288000, C257SE21218, C257SE21229, C257SE21252, C257SE21245, C257SE21256, C257SE21645, C257SE21663
Reexamination Certificate
active
07808026
ABSTRACT:
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
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Samukawa Seiji
Shiraiwa Toshiaki
Tatsumi Tetsuya
Nhu David
Rader & Fishman & Grauer, PLLC
Samukawa Seiji
Sony Corporation
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