Dry etching method and production method of magnetic memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S296000, C257S213000, C257S288000, C257SE21218, C257SE21229, C257SE21252, C257SE21245, C257SE21256, C257SE21645, C257SE21663

Reexamination Certificate

active

07808026

ABSTRACT:
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

REFERENCES:
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5382320 (1995-01-01), Desu et al.
patent: 5387315 (1995-02-01), Sandhu
patent: 5431774 (1995-07-01), Douglas
patent: 5654580 (1997-08-01), Beratan et al.
patent: 5705443 (1998-01-01), Stauf et al.
patent: 5792377 (1998-08-01), Belcher et al.
patent: 5870135 (1999-02-01), Glatt et al.
patent: 6551852 (2003-04-01), Tuttle
patent: 7473646 (2009-01-01), Shiraiwa et al.
patent: 03-173125 (1991-07-01), None
patent: 04-345026 (1992-12-01), None
patent: 07-273120 (1995-10-01), None
patent: 08-124902 (1996-05-01), None
patent: 09-092645 (1997-04-01), None
patent: 2002-030470 (2002-01-01), None
patent: 2002-280637 (2002-09-01), None
patent: 2003-031772 (2003-01-01), None
patent: 2003-060169 (2003-02-01), None
patent: 2003-133527 (2003-05-01), None
patent: 2003-197920 (2003-07-01), None
patent: 2003-218326 (2003-07-01), None
Supplemental European Search Report issued Jan. 26, 2010 for corresponding European Application No. 04 77 2248.
Bandura A.N., et al, “Structure and Tribological Characteristics of Modified Surface Layers of Steel Samples Processed by Pulsed Plasma Streams” 27th EPS Conference on Contr. Fusion and Plasma Phys. Budapest, vol. 24B, pp. 1272-1275, Jun. 12, 2000, XP002562249.
Ahn, T.H, et al, “negative Ion Measurements and Etching in a Pulsed-Power inductively Coupled Plasma in Chlorine” Plasma Sources Science and Technology, Institute of Physics Publishing, Bristol, GB, vol. 5, No. 2, pp. 139-144, May 1, 1996 XP020070119.
PCT International Search Report for PCT/JP2004/012292 mailed on Nov. 30, 2004.
Seiji Samukara, “Etching Gijutus no Saishin Doko”, Focus Report 4, ED Research Sha, Jul. 1, 2002, pp. 3-15.
Seiji Sagawa, latest trend of etching technologies, ED research company, 2,002.07.01, p. 3-15 (Listed on p. 3 of the Japanese Office Action; Application No. 2003-303410; date: Apr, 24, 2007.
Japanese Office Action; Application No. 2003-303410; Dated: Apr. 24, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry etching method and production method of magnetic memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method and production method of magnetic memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method and production method of magnetic memory... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4221674

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.