Dry etching method and dry etching apparatus

Details Dry etching method and dry etching apparatus Dry etching method and dry etching apparatus

1993-06-11

1994-06-28

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, H01L 21306, B44C 122

Patent

active

053243889

ABSTRACT:
Magnetic coils are provided around a plasma generation chamber. To the plasma generation chamber is supplied a microwave which is generated by a microwave generator. Electron cyclotron resonance is caused by the interaction between a magnetic field produced by the magnetic coils and the microwave generated by the microwave generator, so as to accelerate electrons in the plasma generation chamber. The electrons thus accelerated generates a plasma. A reaction chamber is provided underneath the plasma generation chamber. The plasma generated in the plasma generation chamber is introduced to the reaction chamber to be used for etching a material on a sample stage. A reflex klystron is used as the microwave generator. By changing the cavity length of the reflex klystron, the resonance frequency of the cavity resonator is varied, thus modulating the frequency of the microwave supplied to the plasma generation chamber by the microwave generator.

REFERENCES:
patent: 5111111 (1992-05-01), Stevens et al.
patent: 5245157 (1993-09-01), Ohiwa

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