Dry-etching method and apparatus

Details Dry-etching method and apparatus Dry-etching method and apparatus

1992-07-31

1995-04-25

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156657, 156664, 156345, H01L 2100

Patent

active

054095620

ABSTRACT:
In microwave dry etching, the substrate/resist etching selectivity is controlled by adding a material, such as an additional gas, to the reaction gas plasma that heats the substrate with greater energy transfer efficiency than the resist. For example, a W substrate having a resist is etched with an SF.sub.6 reaction gas to which is added an Xe gas for generating incident ions that impinge the substrate with greater energy transfer than they do the resist. This produces a greater hot spot temperature for the substrate as compared with the resist to increase the substrate/resist etching selectivity. The hot spot temperature difference can be further effected by applying a bias potential to the substrate during the etching with an RF power supply.

REFERENCES:
patent: 4028155 (1977-06-01), Jacob
patent: 4253888 (1981-03-01), Kikuchi
patent: 4659449 (1987-04-01), Watanabe
patent: 4786389 (1988-11-01), Stark et al.
patent: 4857137 (1989-08-01), Tachi et al.
patent: 4948462 (1990-08-01), Rossen
patent: 5002632 (1991-03-01), Loewenstein et al.
patent: 5110407 (1992-05-01), Ono et al.
patent: 5147498 (1992-09-01), Nashimoto
Patent Abstracts of Japan, vol. 13, No. 558 (E-858), Dec. 12, 1989 of JP-A-1231326.
Winters et al, "Energy Transfer from Rare Gases to Surfaces: Collisions with Gold and Platinum in the Range 1-4000 eV", The American Physical Society, Physical Review B, vol. 41, No. 10, Apr. 1, 1990, pp. 6240-6254.
Patent Abstracts of Japan, vol. 7, No. 123 (E-178), May 27, 1983, of JP-A-042236.
Derwent Publications Ltd Abstract of JP-A-021271, Feb. 17, 1979, Week 7912.
Patent Abstracts of Japan, vol. 6, No. 57 (C-98), Apr. 14, 1982 of JP-A-169776.
Derwent Publications Ltd Abstract of JP-A-56-137637, Oct. 27, 1981, Week 8149.
Journal of Vacuum Science Technology, vol. B4, No. 1, Mar./Apr. 1986, "Chemical Sputtering of Silicon by F+, Cl+ and Br+ Ions Reactive Spot Model for Reactive Ion Etching", Tachi et al, pp. 459-467.
Journal of Applied Physics, vol. 64, No. 1, Jul. 1988, "Mechanisms of Sputtering of Si in a C12 Environment by Ions With Energies down to 75 eV", Oostra et al, pp. 315-322.

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